Scanning TCT

Scanning-TCT is similar to conventional TCT, but the laser beam is narrow and focued to few microns. The optics and samples are mounted on the XYZ stages, which allows for scanning the detector surface of edge with laser light. Particulars offer a very powerfull system with excellent postion resolution and beam width. The system offers the state of the art performance for semiconductor sensor studies, MOS transistors, studies of semiconductor properties.

Component Parameter Properties
Laser diode
wavelength: 660 nm, 1064 nm (optional others)
pulse power: few m.i.p. - 100 m.i.p. (equivalent in 300 micron Si)
pulse width: <350 ps - 4000 ps (tunable)
coupling: single core fibre
control: with PC over USB
running mode: single pulse: 50 Hz - 1MHz
patter mode: mHz to 100 kHZ
1024 bits deep sequence of pulses
minimum distance between two pulses 440 ns
external control: external NIM logical signal
I/O: ext. trigger in/trigger out MC/trigger out laser
beam spot (FWHM): <11 microns@1064 nm, <8 microns@660 nm
coupling: fibre coupled
attenuation: through collimator on beam-expander
size: <12 microns@1064 nm, <8 microns@650 nm
translation: 3-axis computer controlled
load/stage: 2 kg
moving range: 5 cm x 5 cm x 5cm (x,y,z)
position resolution: < 1 micron
Control: via USB
amplifier: 53 dB
Bias-T range: >1000 V
frequency range: <0.3 MHz->3000 MHz
Mounting brackets
cooling type: Peltier element
heat remover: water / inlets provided
cooling power: 40W (dT~40C)
test sample box: 2.5x3 cm2 - other sizes optional
mounting plane: 5 cm x 5 cm
Full DAQ: adaptation for specific oscilloscope, power source on demand
analysis software: root based package